| -Output Power: |
100 W |
| -Packaging: |
Tray |
| -Operating Temperature Range: |
- 40 C to + 85 C |
| -Technology: |
GaN SiC |
| -Mounting Style: |
Screw |
| -Gain: |
14 dB |
| -Transistor Polarity: |
N-Channel |
| -Brand: |
TriQuint (Qorvo) |
| -Development Kit: |
TGF2819-FS/FL, EVAL BOARD |
| -Vgs - Gate-Source Breakdown Voltage: |
- 2.9 V |
| -Id - Continuous Drain Current: |
7.32 A |
| -Transistor Type: |
HEMT |
| -Maximum Operating Temperature: |
+ 85 C |
| -Operating Frequency: |
3.5 GHz |
| -Minimum Operating Temperature: |
- 40 C |
| -Pd - Power Dissipation: |
86 W |
| -Configuration: |
Single |
| -Maximum Drain Gate Voltage: |
145 V |
| -Manufacturer: |
Qorvo |
| -Factory Pack Quantity: |
25 |
| -Part # Aliases: |
1118709 772-TGF2819-FS-EVB1 |
| -RoHS: |
Details |
| -Product Category: |
RF JFET Transistors |
| -Vds - Drain-Source Breakdown Voltage: |
32 V |
| -Type: |
GaN SiC HEMT |
