STS4C3F60L

MOSFET N/P-CH 60V 4A/3A 8SOIC

Manufacturer STMicroelectronics MPN STS4C3F60L SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet STS4C3F60L.pdf

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss)	60V
-Standard Package	1
-Current - Continuous Drain (Id) @ 25掳C	4A, 3A
-FET Type	N and P-Channel
-Family	FETs - Arrays
-Mounting Type	Surface Mount
-Rds On (Max) @ Id, Vgs	55 mOhm @ 2A, 10V
-Power - Max	2W
-Supplier Device Package	8-SO
-Gate Charge (Qg) @ Vgs	20.4nC @ 4.5V
-Packaging	Cut Tape (CT)
-Series	STripFET鈩�/a>
-Vgs(th) (Max) @ Id	1V @ 250碌A
-Input Capacitance (Ciss) @ Vds	1030pF @ 25V