STE26NA90

MOSFET N-CH 900V 26A ISOTOP

Manufacturer STMicroelectronics MPN STE26NA90 SPQ 50 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	ISOTOP
-Drain to Source Voltage (Vdss)	900V
-Current - Continuous Drain (Id) @ 25°C	26A
-Gate Charge (Qg) @ Vgs	660nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Vgs(th) (Max) @ Id	3.75V @ 1mA
-Input Capacitance (Ciss) @ Vds	1770pF @ 25V
-Rds On (Max) @ Id, Vgs	300 mOhm @ 13A, 10V
-Power - Max	450W
-Supplier Device Package	ISOTOP®
-Standard Package	50
-Packaging	Tube
-Family	FETs - Modules
-Mounting Type	Chassis Mount