English 简体中文 日本語

STD1HNC60T4

MOSFET N-CH 600V 2A DPAK

Manufacturer STMicroelectronics
MPN STD1HNC60T4
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-FET Feature Standard
-Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
-Drain to Source Voltage (Vdss) 600V
-Current - Continuous Drain (Id) @ 25°C 2A (Tc)
-Gate Charge (Qg) @ Vgs 15.5nC @ 10V
-FET Type MOSFET N-Channel, Metal Oxide
-Family FETs - Single
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 5 Ohm @ 1A, 10V
-Power - Max 50W
-Supplier Device Package D-Pak
-Standard Package   1
-Packaging   Cut Tape (CT)  
-Series PowerMESH™ II
-Vgs(th) (Max) @ Id 4V @ 250µA
-Input Capacitance (Ciss) @ Vds 228pF @ 25V

Copyright © 1997-2013 NetEase. All Rights Reserved.