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STD11NM60N

MOSFET N-CH 600V 10A DPAK

Manufacturer STMicroelectronics
MPN STD11NM60N
SPQ 2500
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Standard
-Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
-Drain to Source Voltage (Vdss) 600V
-Current - Continuous Drain (Id) @ 25°C 10A (Tc)
-Gate Charge (Qg) @ Vgs 31nC @ 10V
-Other Related Documents STD11NM60N View All Specifications
-Series MDmesh™ II
-Vgs(th) (Max) @ Id 4V @ 250µA
-Input Capacitance (Ciss) @ Vds 850pF @ 50V
-Rds On (Max) @ Id, Vgs 450 mOhm @ 5A, 10V
-Power - Max 90W
-Supplier Device Package D-Pak
-Standard Package   1
-Packaging   Cut Tape (CT)  
-FET Type MOSFET N-Channel, Metal Oxide
-Family FETs - Single
-Mounting Type Surface Mount

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