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STB6NK60Z-1

N-Channel 600 V 1.2 Ohm SuperMESH™ Power MosFet - I2PAK

Manufacturer STMicroelectronics
MPN STB6NK60Z-1
SPQ 50
ECCN EAR99
Schedule B --
RoHS --
Datasheet STB6NK60Z-1.pdf
SP1027
Dollar $0.53506
RMB ¥4.44402
Stock type SP1027
Stock num 963
Stepped
num price
1+ $0.53506

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Product parameter

-FET Feature Standard
-Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
-Drain to Source Voltage (Vdss) 600V
-Current - Continuous Drain (Id) @ 25°C 6A (Tc)
-Gate Charge (Qg) @ Vgs 46nC @ 10V
-Other Related Documents STB6NK60Z-1 View All Specifications
-Series SuperMESH™
-Vgs(th) (Max) @ Id 4.5V @ 100µA
-Input Capacitance (Ciss) @ Vds 905pF @ 25V
-Rds On (Max) @ Id, Vgs 1.2 Ohm @ 3A, 10V
-Power - Max 110W
-Supplier Device Package I2PAK
-Standard Package   50
-Packaging   Tube  
-FET Type MOSFET N-Channel, Metal Oxide
-Family FETs - Single
-Mounting Type Through Hole
-ECCN EAR99

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