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STB50N25M5

STB50N25M5 , N沟道 MOSFET 晶体管, 28 A, Vds=250 V, 3针 TO-263封装

Manufacturer STMicroelectronics
MPN STB50N25M5
SPQ 1000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Standard
-Package / Case TO-263-3, D虏Pak (2 Leads + Tab), TO-263AB
-Drain to Source Voltage (Vdss) 250V
-Standard Package   1,000
-Current - Continuous Drain (Id) @ 25掳C 28A (Tc)
-Packaging   Tape & Reel (TR)  
-FET Type MOSFET N-Channel, Metal Oxide
-Family FETs - Single
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 65 mOhm @ 14A, 10V
-Power - Max 110W
-Supplier Device Package D2PAK
-Gate Charge (Qg) @ Vgs 44nC @ 10V
-Product Training Modules 5th Generation High Voltage Mosfet Technology
-Other Related Documents STB50N25M5 View All Specifications
-Series MDmesh鈩�V
-Vgs(th) (Max) @ Id 5V @ 100碌A
-Input Capacitance (Ciss) @ Vds 1700pF @ 50V

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