| -FET Feature |
Logic Level Gate |
| -Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| -Drain to Source Voltage (Vdss) |
600V |
| -Current - Continuous Drain (Id) @ 25°C |
21A (Tc) |
| -Gate Charge (Qg) @ Vgs |
80nC @ 10V |
| -Packaging |
Tape & Reel (TR) |
| -FET Type |
MOSFET N-Channel, Metal Oxide |
| -Family |
FETs - Single |
| -Mounting Type |
Surface Mount |
| -ECCN |
EAR99 |
| -Rds On (Max) @ Id, Vgs |
160 mOhm @ 10.5A, 10V |
| -Power - Max |
160W |
| -Supplier Device Package |
D²PAK |
| -Standard Package |
1,000 |
| -Product Training Modules |
Automotive Grade Transistors and Discretes |
| -Other Related Documents |
STB27NM60ND View All Specifications |
| -Series |
FDmesh™ II |
| -Vgs(th) (Max) @ Id |
5V @ 250µA |
| -Input Capacitance (Ciss) @ Vds |
2400pF @ 50V |
