STB25NM60N

MOSFET N-CH 600V 21A D2PAK

Manufacturer STMicroelectronics MPN STB25NM60N SPQ 1000 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Standard
-Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-Drain to Source Voltage (Vdss)	600V
-Current - Continuous Drain (Id) @ 25°C	21A (Tc)
-Gate Charge (Qg) @ Vgs	84nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Family	FETs - Single
-Mounting Type	Surface Mount
-Rds On (Max) @ Id, Vgs	160 mOhm @ 10.5A, 10V
-Power - Max	160W
-Supplier Device Package	D2PAK
-Standard Package	1
-Packaging	Cut Tape (CT)
-Series	MDmesh™ II
-Vgs(th) (Max) @ Id	4V @ 250µA
-Input Capacitance (Ciss) @ Vds	2400pF @ 50V