STB20NM60-1

MOSFET N-CH 600V 20A I2PAK

Manufacturer STMicroelectronics MPN STB20NM60-1 SPQ 50 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Standard
-Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
-Drain to Source Voltage (Vdss)	600V
-Current - Continuous Drain (Id) @ 25°C	20A (Tc)
-Gate Charge (Qg) @ Vgs	54nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Family	FETs - Single
-Mounting Type	Through Hole
-Rds On (Max) @ Id, Vgs	290 mOhm @ 10A, 10V
-Power - Max	192W
-Supplier Device Package	I2PAK
-Standard Package	50
-Packaging	Tube
-Series	MDmesh™
-Vgs(th) (Max) @ Id	5V @ 250µA
-Input Capacitance (Ciss) @ Vds	1500pF @ 25V