STB16NK65Z-S

MOSFET N-CH 650V 13A I2SPAK

Manufacturer STMicroelectronics MPN STB16NK65Z-S SPQ 1000 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Standard
-Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
-Drain to Source Voltage (Vdss)	650V
-Current - Continuous Drain (Id) @ 25°C	13A (Tc)
-Gate Charge (Qg) @ Vgs	89nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Family	FETs - Single
-Mounting Type	Through Hole
-Rds On (Max) @ Id, Vgs	500 mOhm @ 6.5A, 10V
-Power - Max	190W
-Supplier Device Package	I2PAK
-Standard Package	1,000
-Packaging	Tube
-Series	SuperMESH™
-Vgs(th) (Max) @ Id	4.5V @ 100µA
-Input Capacitance (Ciss) @ Vds	2750pF @ 25V