STB12NM60N-1

MOSFET N-CH 600V 10A I2PAK

Manufacturer STMicroelectronics MPN STB12NM60N-1 SPQ 1000 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Standard
-Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
-Drain to Source Voltage (Vdss)	600V
-Current - Continuous Drain (Id) @ 25°C	10A (Tc)
-Gate Charge (Qg) @ Vgs	30.5nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Family	FETs - Single
-Mounting Type	Through Hole
-Rds On (Max) @ Id, Vgs	410 mOhm @ 5A, 10V
-Power - Max	90W
-Supplier Device Package	I2PAK
-Standard Package	1,000
-Packaging	Tube
-Series	MDmesh™ II
-Vgs(th) (Max) @ Id	4V @ 250µA
-Input Capacitance (Ciss) @ Vds	960pF @ 50V