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STB10NK60Z-1

MOSFET N-CH 600V 10A I2PAK

Manufacturer STMicroelectronics
MPN STB10NK60Z-1
SPQ 1000
ECCN --
Schedule B --
RoHS --
Datasheet STB10NK60Z-1.pdf

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Product parameter

-FET Feature Standard
-Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
-Drain to Source Voltage (Vdss) 600V
-Current - Continuous Drain (Id) @ 25°C 10A (Tc)
-Gate Charge (Qg) @ Vgs 70nC @ 10V
-Other Related Documents STB10NK60Z View All Specifications
-Series SuperMESH™
-Vgs(th) (Max) @ Id 4.5V @ 250µA
-Input Capacitance (Ciss) @ Vds 1370pF @ 25V
-Rds On (Max) @ Id, Vgs 750 mOhm @ 4.5A, 10V
-Power - Max 115W
-Supplier Device Package I2PAK
-Standard Package   50
-Packaging   Tube  
-FET Type MOSFET N-Channel, Metal Oxide
-Family FETs - Single
-Mounting Type Through Hole

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