SSM6P36FE,LM

MOSFET 2P-CH 20V 0.33A ES6

Manufacturer Toshiba MPN SSM6P36FE,LM SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	SOT-563, SOT-666
-Drain to Source Voltage (Vdss)	20V
-Catalog Drawings	ES6 Top ES6 Side
-Gate Charge (Qg) @ Vgs	1.2nC @ 4V
-Product Training Modules	Small Signal MOSFET
-FET Type	2 P-Channel (Dual)
-Vgs(th) (Max) @ Id	1V @ 1mA
-Input Capacitance (Ciss) @ Vds	43pF @ 10V
-Rds On (Max) @ Id, Vgs	1.31 Ohm @ 100mA, 4.5V
-Power - Max	150mW
-Supplier Device Package	ES6 (1.6x1.6)
-Standard Package	1
-Current - Continuous Drain (Id) @ 25掳C	330mA
-Packaging	Cut Tape (CT)
-Family	FETs - Arrays
-Mounting Type	Surface Mount