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SMBT3906DW1T1G

SMBT3906DW1T1G, 双 PNP 双极晶体管, -200 mA, Vce=-40 V, HFE:30, 250 MHz, 6针 SOT-363封装

Manufacturer onsemi
MPN SMBT3906DW1T1G
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet SMBT3906DW1T1G.pdf
SP1027
Dollar $0.24738
RMB ¥2.05465
Stock type SP1027
Stock num 30043
Stepped
num price
1+ $0.24738
10+ $0.14865
25+ $0.14725
100+ $0.14462
250+ $0.14198
500+ $0.1395
1000+ $0.13687
3000+ $0.13423
6000+ $0.13175
15000+ $0.12912
30000+ $0.12648
SP1036
Dollar $0.10099
RMB ¥0.83879
Stock type SP1036
Stock num 2747
Stepped
num price
1+ $0.10099
200+ $0.06978
1500+ $0.06328
3000+ $0.05924

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
-Package / Case 6-TSSOP, SC-88, SOT-363
-Transistor Type 2 PNP (Dual)
-Current - Collector (Ic) (Max) 200mA
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 40V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
-Frequency - Transition 250MHz
-Power - Max 150mW
-Supplier Device Package SOT-363, SC70
-Part Status Active
-Manufacturer ON Semiconductor
-Family Transistors - Bipolar (BJT) - Arrays
-Operating Temperature -55°C ~ 150°C (TJ)
-Packaging Tape & Reel (TR)

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