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SIDC56D170E6

DIODE GEN PURP 1.7KV 75A WAFER

Manufacturer Infineon Technologies
MPN SIDC56D170E6
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Operating Temperature - Junction -40掳C ~ 150掳C
-Package / Case Wafer
-Standard Package   1
-Diode Type Standard
-Current - Reverse Leakage @ Vr 27碌A @ 1700V
-Mounting Type Surface Mount
-Voltage - Forward (Vf) (Max) @ If 2.15V @ 75A
-Current - Average Rectified (Io) 75A (DC)
-Supplier Device Package Sawn on foil
-Packaging   Bulk  
-Speed Standard Recovery >500ns, > 200mA (Io)
-Family Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 1700V (1.7kV)

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