| -Operating Temperature - Junction |
-55掳C ~ 175掳C |
| -Capacitance @ Vr, F |
600pF @ 1V, 1MHz |
| -Supplier Device Package |
Sawn on foil |
| -Packaging |
Bulk |
| -Speed |
No Recovery Time > 500mA (Io) |
| -Current - Reverse Leakage @ Vr |
200碌A @ 300V |
| -Mounting Type |
Surface Mount |
| -Voltage - Forward (Vf) (Max) @ If |
1.7V @ 10A |
| -Current - Average Rectified (Io) |
10A (DC) |
| -Package / Case |
Wafer |
| -Standard Package |
1 |
| -Diode Type |
Silicon Carbide Schottky |
| -Reverse Recovery Time (trr) |
0ns |
| -Family |
Diodes, Rectifiers - Single |
| -Voltage - DC Reverse (Vr) (Max) |
300V |
