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SIDC09D60F6

DIODE GEN PURP 600V 30A WAFER

Manufacturer Infineon Technologies
MPN SIDC09D60F6
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Operating Temperature - Junction -40掳C ~ 175掳C
-Package / Case Wafer
-Standard Package   1
-Diode Type Standard
-Current - Reverse Leakage @ Vr 27碌A @ 600V
-Mounting Type Surface Mount
-Voltage - Forward (Vf) (Max) @ If 1.6V @ 30A
-Current - Average Rectified (Io) 30A (DC)
-Supplier Device Package Sawn on foil
-Packaging   Bulk  
-Speed Fast Recovery =< 500ns, > 200mA (Io)
-Family Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 600V

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