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SIDC07D60E6

DIODE GEN PURP 600V 15A WAFER

Manufacturer Infineon Technologies
MPN SIDC07D60E6
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Operating Temperature - Junction -55掳C ~ 150掳C
-Package / Case Wafer
-Standard Package   1
-Diode Type Standard
-Current - Reverse Leakage @ Vr 250碌A @ 600V
-Mounting Type Surface Mount
-Voltage - Forward (Vf) (Max) @ If 1.25V @ 15A
-Current - Average Rectified (Io) 15A (DC)
-Supplier Device Package Sawn on foil
-Packaging   Bulk  
-Speed Standard Recovery >500ns, > 200mA (Io)
-Family Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 600V

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