English 简体中文 日本語

SIDC06D60C6

DIODE GEN PURP 600V 20A WAFER

Manufacturer Infineon Technologies
MPN SIDC06D60C6
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Operating Temperature - Junction -40°C ~ 175°C
-Package / Case Wafer
-Standard Package   1
-Diode Type Standard
-Current - Reverse Leakage @ Vr 27µA @ 600V
-Mounting Type Surface Mount
-Voltage - Forward (Vf) (Max) @ If 1.95V @ 20A
-Current - Average Rectified (Io) 20A (DC)
-Supplier Device Package Sawn on foil
-Packaging   Bulk  
-Speed Standard Recovery >500ns, > 200mA (Io)
-Family Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 600V

Copyright © 1997-2013 NetEase. All Rights Reserved.