SIDC03D60F6

DIODE GEN PURP 600V 6A WAFER

Manufacturer Infineon Technologies MPN SIDC03D60F6 SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-Operating Temperature - Junction	-40°C ~ 150°C
-Package / Case	Wafer
-Standard Package	1
-Diode Type	Standard
-Current - Reverse Leakage @ Vr	27µA @ 600V
-Mounting Type	Surface Mount
-Voltage - Forward (Vf) (Max) @ If	1.6V @ 6A
-Current - Average Rectified (Io)	6A (DC)
-Supplier Device Package	Sawn on foil
-Packaging	Bulk
-Speed	Fast Recovery =< 500ns, > 200mA (Io)
-Family	Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max)	600V