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SIDC03D120H6

DIODE GEN PURP 1.2KV 3A WAFER

Manufacturer Infineon Technologies
MPN SIDC03D120H6
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Operating Temperature - Junction -55°C ~ 150°C
-Package / Case Wafer
-Standard Package   1
-Diode Type Standard
-Current - Reverse Leakage @ Vr 27µA @ 1200V
-Mounting Type Surface Mount
-Voltage - Forward (Vf) (Max) @ If 1.6V @ 3A
-Current - Average Rectified (Io) 3A (DC)
-Supplier Device Package Sawn on foil
-Packaging   Bulk  
-Speed Standard Recovery >500ns, > 200mA (Io)
-Family Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 1200V (1.2kV)

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