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SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOIC

Manufacturer Vishay
MPN SI4973DY-T1-GE3
SPQ 2500
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 5.8A
-Gate Charge (Qg) @ Vgs 56nC @ 10V
-FET Type 2 P-Channel (Dual)
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 23 mOhm @ 7.6A, 10V
-Power - Max 1.1W
-Supplier Device Package 8-SO
-Standard Package   2,500
-Packaging   Tape & Reel (TR)  
-Series TrenchFET®
-Vgs(th) (Max) @ Id 3V @ 250µA

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