English 简体中文 日本語

SI4972DY-T1-E3

MOSFET 2N-CH 30V 10.8A 8SOIC

Manufacturer Vishay
MPN SI4972DY-T1-E3
SPQ 2500
ECCN --
Schedule B --
RoHS --
Datasheet --

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-FET Feature Standard
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 10.8A, 7.2A
-Gate Charge (Qg) @ Vgs 28nC @ 10V
-FET Type 2 N-Channel (Dual)
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 14.5 mOhm @ 6A, 10V
-Power - Max 3.1W, 2.5W
-Supplier Device Package 8-SO
-Standard Package   2,500
-Packaging   Tape & Reel (TR)  
-Series TrenchFET®
-Vgs(th) (Max) @ Id 3V @ 250µA
-Input Capacitance (Ciss) @ Vds 1080pF @ 15V

Copyright © 1997-2013 NetEase. All Rights Reserved.