SI4967DY-T1-GE3

MOSFET 2P-CH 12V 8SOIC

Manufacturer Vishay MPN SI4967DY-T1-GE3 SPQ 2500 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss)	12V
-Standard Package	2,500
-Packaging	Tape & Reel (TR)
-Series	TrenchFET庐
-Vgs(th) (Max) @ Id	450mV @ 250碌A (Min)
-Rds On (Max) @ Id, Vgs	23 mOhm @ 7.5A, 4.5V
-Power - Max	2W
-Supplier Device Package	8-SO
-Gate Charge (Qg) @ Vgs	55nC @ 10V
-FET Type	2 P-Channel (Dual)
-Family	FETs - Arrays
-Mounting Type	Surface Mount