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SI4963BDY-T1-GE3

MOSFET 2P-CH 20V 4.9A 8SOIC

Manufacturer Vishay
MPN SI4963BDY-T1-GE3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 20V
-Standard Package   2,500
-Current - Continuous Drain (Id) @ 25掳C 4.9A
-FET Type 2 P-Channel (Dual)
-Vgs(th) (Max) @ Id 1.4V @ 250碌A
-Rds On (Max) @ Id, Vgs 32 mOhm @ 6.5A, 4.5V
-Power - Max 1.1W
-Supplier Device Package 8-SO
-Gate Charge (Qg) @ Vgs 21nC @ 4.5V
-Packaging   Tape & Reel (TR)  
-Family FETs - Arrays
-Mounting Type Surface Mount

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