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SI4952DY-T1-GE3

MOSFET 2N-CH 25V 8A 8-SOIC

Manufacturer Vishay
MPN SI4952DY-T1-GE3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --
SP1036
Dollar $0.18023
RMB ¥1.49693
Stock type SP1036
Stock num 2495
Stepped
num price
1+ $0.18023
50+ $0.13929
1250+ $0.12664
2500+ $0.1151

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 25V
-Current - Continuous Drain (Id) @ 25°C 8A
-Gate Charge (Qg) @ Vgs 18nC @ 10V
-FET Type 2 N-Channel (Dual)
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 23 mOhm @ 7A, 10V
-Power - Max 2.8W
-Supplier Device Package 8-SO
-Standard Package   1
-Packaging   Cut Tape (CT)  
-Series TrenchFET®
-Vgs(th) (Max) @ Id 2.2V @ 250µA
-Input Capacitance (Ciss) @ Vds 680pF @ 13V

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