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SI4942DY-T1-GE3

MOSFET 2N-CH 40V 5.3A 8-SOIC

Manufacturer Vishay
MPN SI4942DY-T1-GE3
SPQ 2500
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 40V
-Current - Continuous Drain (Id) @ 25°C 5.3A
-Gate Charge (Qg) @ Vgs 32nC @ 10V
-FET Type 2 N-Channel (Dual)
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 21 mOhm @ 7.4A, 10V
-Power - Max 1.1W
-Supplier Device Package 8-SO
-Standard Package   2,500
-Packaging   Tape & Reel (TR)  
-Series TrenchFET®
-Vgs(th) (Max) @ Id 3V @ 250µA

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