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SI4925BDY-T1-GE3

MOSFET 2P-CH 30V 5.3A 8-SOIC

Manufacturer Vishay
MPN SI4925BDY-T1-GE3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 30V
-Standard Package   2,500
-Current - Continuous Drain (Id) @ 25掳C 5.3A
-FET Type 2 P-Channel (Dual)
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 25 mOhm @ 7.1A, 10V
-Power - Max 1.1W
-Supplier Device Package 8-SO
-Gate Charge (Qg) @ Vgs 50nC @ 10V
-Packaging   Tape & Reel (TR)  
-Series TrenchFET庐
-Vgs(th) (Max) @ Id 3V @ 250碌A

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