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SI4922BDY-T1-GE3

MOSFET 2N-CH 30V 8A 8-SOIC

Manufacturer Vishay
MPN SI4922BDY-T1-GE3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Standard
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 8A
-Part Status Active
-Manufacturer Vishay Siliconix
-Series TrenchFET®
-Vgs(th) (Max) @ Id 1.8V @ 250µA
-Operating Temperature -55°C ~ 150°C (TJ)
-Packaging Tape & Reel (TR)
-Rds On (Max) @ Id, Vgs 16 mOhm @ 5A, 10V
-Power - Max 3.1W
-Supplier Device Package 8-SO
-Gate Charge (Qg) @ Vgs 62nC @ 10V
-Category Discrete Semiconductor Products
-FET Type 2 N-Channel (Dual)
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 2070pF @ 15V

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