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SI4908DY-T1-E3

MOSFET 2N-CH 40V 5A 8-SOIC

Manufacturer Vishay
MPN SI4908DY-T1-E3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Standard
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 40V
-Standard Package   1
-Current - Continuous Drain (Id) @ 25掳C 5A
-FET Type 2 N-Channel (Dual)
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 60 mOhm @ 4.1A, 10V
-Power - Max 2.75W
-Supplier Device Package 8-SO
-Gate Charge (Qg) @ Vgs 12nC @ 10V
-Packaging   Cut Tape (CT)  
-Series TrenchFET庐
-Vgs(th) (Max) @ Id 2.2V @ 250碌A
-Input Capacitance (Ciss) @ Vds 355pF @ 20V

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