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SI4834BDY-T1-E3

MOSFET 2N-CH 30V 5.7A 8-SOIC

Manufacturer Vishay
MPN SI4834BDY-T1-E3
SPQ 100
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 30V
-Standard Package   1
-Current - Continuous Drain (Id) @ 25掳C 5.7A
-FET Type 2 N-Channel (Dual)
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 22 mOhm @ 7.5A, 10V
-Power - Max 1.1W
-Supplier Device Package 8-SO
-Gate Charge (Qg) @ Vgs 11nC @ 4.5V
-Packaging   Digi-Reel庐  
-Series TrenchFET庐
-Vgs(th) (Max) @ Id 3V @ 250碌A

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