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SI4561DY-T1-E3

MOSFET N/P-CH 40V 6.8A 8-SOIC

Manufacturer Vishay
MPN SI4561DY-T1-E3
SPQ 2500
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 40V
-Current - Continuous Drain (Id) @ 25°C 6.8A, 7.2A
-Gate Charge (Qg) @ Vgs 20nC @ 10V
-FET Type N and P-Channel
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 35.5 mOhm @ 5A, 10V
-Power - Max 3W, 3.3W
-Supplier Device Package 8-SO
-Standard Package   2,500
-Packaging   Tape & Reel (TR)  
-Series TrenchFET®
-Vgs(th) (Max) @ Id 3V @ 250µA
-Input Capacitance (Ciss) @ Vds 640pF @ 20V

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