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SI4388DY-T1-GE3

MOSFET 2N-CH 30V 10.7A 8-SOIC

Manufacturer Vishay
MPN SI4388DY-T1-GE3
SPQ 2500
ECCN --
Schedule B --
RoHS --
Datasheet SI4388DY-T1-GE3.pdf

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Product parameter

-FET Feature Standard
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 10.7A, 11.3A
-Gate Charge (Qg) @ Vgs 27nC @ 10V
-FET Type 2 N-Channel (Half Bridge)
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 16 mOhm @ 8A, 10V
-Power - Max 3.3W, 3.5W
-Supplier Device Package 8-SO
-Standard Package   2,500
-Packaging   Tape & Reel (TR)  
-Series TrenchFET®
-Vgs(th) (Max) @ Id 3V @ 250µA
-Input Capacitance (Ciss) @ Vds 946pF @ 15V

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