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SI4330DY-T1-GE3

MOSFET 2N-CH 30V 6.6A 8-SOIC

Manufacturer Vishay
MPN SI4330DY-T1-GE3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 6.6A
-Gate Charge (Qg) @ Vgs 20nC @ 4.5V
-FET Type 2 N-Channel (Dual)
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 16.5 mOhm @ 8.7A, 10V
-Power - Max 1.1W
-Supplier Device Package 8-SO
-Standard Package   2,500
-Packaging   Tape & Reel (TR)  
-Series TrenchFET®
-Vgs(th) (Max) @ Id 3V @ 250µA

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