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SI4310BDY-T1-E3

MOSFET 2N-CH 30V 7.5A 14SOIC

Manufacturer Vishay
MPN SI4310BDY-T1-E3
SPQ 2500
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 14-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 7.5A, 9.8A
-Gate Charge (Qg) @ Vgs 18nC @ 4.5V
-FET Type 2 N-Channel (Dual)
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 11 mOhm @ 10A, 10V
-Power - Max 1.14W, 1.47W
-Supplier Device Package 14-SOICN
-Standard Package   2,500
-Packaging   Tape & Reel (TR)  
-Series TrenchFET®
-Vgs(th) (Max) @ Id 3V @ 250µA
-Input Capacitance (Ciss) @ Vds 2370pF @ 15V

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