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SI4226DY-T1-E3

MOSFET 2N-CH 25V 8A 8SOIC

Manufacturer Vishay
MPN SI4226DY-T1-E3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet SI4226DY-T1-E3.pdf

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Product parameter

-FET Feature Standard
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 25V
-Current - Continuous Drain (Id) @ 25°C 8A
-Gate Charge (Qg) @ Vgs 36nC @ 10V
-FET Type 2 N-Channel (Dual)
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 19.5 mOhm @ 7A, 4.5V
-Power - Max 3.2W
-Supplier Device Package 8-SO
-Standard Package   2,500
-Packaging   Tape & Reel (TR)  
-Series TrenchFET®
-Vgs(th) (Max) @ Id 2V @ 250µA
-Input Capacitance (Ciss) @ Vds 1255pF @ 15V

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