English 简体中文 日本語

SI3983DV-T1-GE3

MOSFET 2P-CH 20V 2.1A 6-TSOP

Manufacturer Vishay
MPN SI3983DV-T1-GE3
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet --

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-FET Feature Logic Level Gate
-Package / Case SOT-23-6 Thin, TSOT-23-6
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 2.1A
-Gate Charge (Qg) @ Vgs 7.5nC @ 4.5V
-FET Type 2 P-Channel (Dual)
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 110 mOhm @ 2.5A, 4.5V
-Power - Max 830mW
-Supplier Device Package 6-TSOP
-Standard Package   3,000
-Packaging   Tape & Reel (TR)  
-Series TrenchFET®
-Vgs(th) (Max) @ Id 1.1V @ 250µA

Copyright © 1997-2013 NetEase. All Rights Reserved.