SI3909DV-T1-E3

MOSFET 2P-CH 20V 6TSOP

Manufacturer Vishay MPN SI3909DV-T1-E3 SPQ 3000 ECCN -- Schedule B -- RoHS -- Datasheet --

Quote

Demand quantity		Target price
Contact number		name
company		email

Product parameter

-FET Feature	Logic Level Gate
-Package / Case	SOT-23-6 Thin, TSOT-23-6
-Drain to Source Voltage (Vdss)	20V
-Standard Package	3,000
-Packaging	Tape & Reel (TR)
-Series	TrenchFET®
-Vgs(th) (Max) @ Id	500mV @ 250µA (Min)
-Rds On (Max) @ Id, Vgs	200 mOhm @ 1.8A, 4.5V
-Power - Max	1.15W
-Supplier Device Package	6-TSOP
-Gate Charge (Qg) @ Vgs	4nC @ 4.5V
-FET Type	2 P-Channel (Dual)
-Family	FETs - Arrays
-Mounting Type	Surface Mount