SI3905DV-T1-E3

MOSFET 2P-CH 8V 6-TSOP

Manufacturer Vishay MPN SI3905DV-T1-E3 SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	SOT-23-6 Thin, TSOT-23-6
-Drain to Source Voltage (Vdss)	8V
-Standard Package	3,000
-Packaging	Tape & Reel (TR)
-Series	TrenchFET®
-Vgs(th) (Max) @ Id	450mV @ 250µA (Min)
-Rds On (Max) @ Id, Vgs	125 mOhm @ 2.5A, 4.5V
-Power - Max	1.15W
-Supplier Device Package	6-TSOP
-Gate Charge (Qg) @ Vgs	6nC @ 4.5V
-FET Type	2 P-Channel (Dual)
-Family	FETs - Arrays
-Mounting Type	Surface Mount