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SI3850ADV-T1-E3

MOSFET N/P-CH 20V 1.4A 6TSOP

Manufacturer Vishay
MPN SI3850ADV-T1-E3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case SOT-23-6 Thin, TSOT-23-6
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 1.4A, 960mA
-Gate Charge (Qg) @ Vgs 1.4nC @ 4.5V
-FET Type N and P-Channel, Common Drain
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 300 mOhm @ 500mA, 4.5V
-Power - Max 1.08W
-Supplier Device Package 6-TSOP
-Standard Package   1
-Packaging   Cut Tape (CT)  
-Series TrenchFET®
-Vgs(th) (Max) @ Id 1.5V @ 250µA

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