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SI3529DV-T1-GE3

MOSFET N/P-CH 40V 2.5A 6-TSOP

Manufacturer Vishay
MPN SI3529DV-T1-GE3
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case SOT-23-6 Thin, TSOT-23-6
-Drain to Source Voltage (Vdss) 40V
-Current - Continuous Drain (Id) @ 25°C 2.5A, 1.95A
-Gate Charge (Qg) @ Vgs 7nC @ 10V
-FET Type N and P-Channel
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 125 mOhm @ 2.2A, 10V
-Power - Max 1.4W
-Supplier Device Package 6-TSOP
-Standard Package   3,000
-Packaging   Tape & Reel (TR)  
-Series TrenchFET®
-Vgs(th) (Max) @ Id 3V @ 250µA
-Input Capacitance (Ciss) @ Vds 205pF @ 20V

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