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SI1988DH-T1-GE3

MOSFET 2N-CH 20V 1.3A SC-70-6

Manufacturer Vishay
MPN SI1988DH-T1-GE3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 6-TSSOP, SC-88, SOT-363
-Drain to Source Voltage (Vdss) 20V
-Standard Package   3,000
-Current - Continuous Drain (Id) @ 25掳C 1.3A
-FET Type 2 N-Channel (Dual)
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 168 mOhm @ 1.4A, 4.5V
-Power - Max 1.25W
-Supplier Device Package SC-70-6 (SOT-363)
-Gate Charge (Qg) @ Vgs 4.1nC @ 8V
-Packaging   Tape & Reel (TR)  
-Series TrenchFET庐
-Vgs(th) (Max) @ Id 1V @ 250碌A
-Input Capacitance (Ciss) @ Vds 110pF @ 10V

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