SI1926DL-T1-GE3

Dual N-Channel 60 V 1.4 Ω 1.4 nC Surface Mount Power Mosfet - TSSOP-6

Manufacturer Vishay MPN SI1926DL-T1-GE3 SPQ 1 ECCN EAR99 Schedule B -- RoHS -- Datasheet --

SP1027 Dollar $0.5704 RMB ￥4.73754 Stock type SP1027 Stock num 2510 Stepped num price 1+ $0.5704 10+ $0.47012 25+ $0.46609 100+ $0.30396 250+ $0.30086 500+ $0.25219 1000+ $0.17887 SP1034 Dollar $1.14289 RMB ￥9.49244 Stock type SP1034 Stock num 2900 Stepped num price 25+ $1.14289 50+ $1.08562 100+ $1.03124 250+ $0.98015 1000+ $0.93071 SP1034 Dollar $1.08562 RMB ￥9.01678 Stock type SP1034 Stock num 2900 Stepped num price 50+ $1.08562 100+ $1.03124 250+ $0.98015 1000+ $0.93071 SP1034 Dollar $0.54714 RMB ￥4.54435 Stock type SP1034 Stock num 2900 Stepped num price 3000+ $0.54714

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	6-TSSOP, SC-88, SOT-363
-Drain to Source Voltage (Vdss)	60V
-Current - Continuous Drain (Id) @ 25°C	370mA
-Gate Charge (Qg) @ Vgs	1.4nC @ 10V
-FET Type	2 N-Channel (Dual)
-Family	FETs - Arrays
-Mounting Type	Surface Mount
-ECCN	EAR99
-Rds On (Max) @ Id, Vgs	1.4 Ohm @ 340mA, 10V
-Power - Max	510mW
-Supplier Device Package	SC-70-3 (SOT323)
-Standard Package	3,000
-Packaging	Tape & Reel (TR)
-Series	TrenchFET®
-Vgs(th) (Max) @ Id	2.5V @ 250µA
-Input Capacitance (Ciss) @ Vds	18.5pF @ 30V