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SI1035X-T1-E3

MOSFET N/P-CH 20V 180MA SOT563F

Manufacturer Vishay
MPN SI1035X-T1-E3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case SOT-563, SOT-666
-Drain to Source Voltage (Vdss) 20V
-Standard Package   1
-Current - Continuous Drain (Id) @ 25掳C 180mA, 145mA
-FET Type N and P-Channel
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 5 Ohm @ 200mA, 4.5V
-Power - Max 250mW
-Supplier Device Package SC-89-6
-Gate Charge (Qg) @ Vgs 0.75nC @ 4.5V
-Packaging   Cut Tape (CT)  
-Series TrenchFET庐
-Vgs(th) (Max) @ Id 400mV @ 250碌A (Min)

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