SI1029X-T1-E3

MOSFET N/P-CH 60V SOT563F

Manufacturer Vishay MPN SI1029X-T1-E3 SPQ 3000 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	SOT-563, SOT-666
-Drain to Source Voltage (Vdss)	60V
-Current - Continuous Drain (Id) @ 25°C	305mA, 190mA
-Gate Charge (Qg) @ Vgs	0.75nC @ 4.5V
-FET Type	N and P-Channel
-Family	FETs - Arrays
-Mounting Type	Surface Mount
-Rds On (Max) @ Id, Vgs	1.4 Ohm @ 500mA, 10V
-Power - Max	250mW
-Supplier Device Package	SC-89-6
-Standard Package	3,000
-Packaging	Tape & Reel (TR)
-Series	TrenchFET®
-Vgs(th) (Max) @ Id	2.5V @ 250µA
-Input Capacitance (Ciss) @ Vds	30pF @ 25V