SI1028X-T1-GE3

SI1028X-T1-GE3, 双 N沟道 MOSFET 晶体管, 0.48 A, Vds=30 V, 6针 SC-89封装

Manufacturer Vishay MPN SI1028X-T1-GE3 SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet --

SP1027 Dollar $0.20321 RMB ￥1.68779 Stock type SP1027 Stock num 2 Stepped num price 1+ $0.20321 1+ $0.20321

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	SOT-563, SOT-666
-Drain to Source Voltage (Vdss)	30V
-Standard Package	3,000
-Packaging	Tape & Reel (TR)
-Series	TrenchFET®
-Vgs(th) (Max) @ Id	2.5V @ 250µA
-Input Capacitance (Ciss) @ Vds	16pF @ 15V
-Rds On (Max) @ Id, Vgs	650 mOhm @ 500mA, 10V
-Power - Max	220mW
-Supplier Device Package	SC-89-6
-Gate Charge (Qg) @ Vgs	2nC @ 10V
-FET Type	2 N-Channel (Dual)
-Family	FETs - Arrays
-Mounting Type	Surface Mount