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SI1026X-T1-E3

MOSFET 2N-CH 60V 305MA SOT563F

Manufacturer Vishay
MPN SI1026X-T1-E3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case SOT-563, SOT-666
-Drain to Source Voltage (Vdss) 60V
-Standard Package   1
-Current - Continuous Drain (Id) @ 25掳C 305mA
-FET Type 2 N-Channel (Dual)
-Vgs(th) (Max) @ Id 2.5V @ 250碌A
-Input Capacitance (Ciss) @ Vds 30pF @ 25V
-Rds On (Max) @ Id, Vgs 1.4 Ohm @ 500mA, 10V
-Power - Max 250mW
-Supplier Device Package SC-89-6
-Gate Charge (Qg) @ Vgs 0.6nC @ 4.5V
-Packaging   Cut Tape (CT)  
-Family FETs - Arrays
-Mounting Type Surface Mount

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