SI1025X-T1-E3

Dual P-Channel 60 V 4 Ohm Surface Mount TrenchFET Power Mosfet - SC-89-6

Manufacturer Vishay MPN SI1025X-T1-E3 SPQ 3000 ECCN EAR99 Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	SOT-563, SOT-666
-Drain to Source Voltage (Vdss)	60V
-Current - Continuous Drain (Id) @ 25°C	190mA
-Gate Charge (Qg) @ Vgs	1.7nC @ 15V
-FET Type	2 P-Channel (Dual)
-Family	FETs - Arrays
-Mounting Type	Surface Mount
-ECCN	EAR99
-Rds On (Max) @ Id, Vgs	4 Ohm @ 500mA, 10V
-Power - Max	250mW
-Supplier Device Package	SC-89-6
-Standard Package	1
-Packaging	Cut Tape (CT)
-Series	TrenchFET®
-Vgs(th) (Max) @ Id	3V @ 250µA
-Input Capacitance (Ciss) @ Vds	23pF @ 25V