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SI1016X-T1-E3

MOSFET N/P-CH 20V 485MA SOT563F

Manufacturer Vishay
MPN SI1016X-T1-E3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case SOT-563, SOT-666
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 485mA, 370mA
-Gate Charge (Qg) @ Vgs 0.75nC @ 4.5V
-FET Type N and P-Channel
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 700 mOhm @ 600mA, 4.5V
-Power - Max 250mW
-Supplier Device Package SC-89-6
-Standard Package   3,000
-Packaging   Tape & Reel (TR)  
-Series TrenchFET®
-Vgs(th) (Max) @ Id 1V @ 250µA

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